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M58LR128FT 데이터시트(PDF) 18 Page - STMicroelectronics

부품명 M58LR128FT
상세설명  128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
PDF  82 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LR128FT 데이터시트(HTML) 18 Page - STMicroelectronics

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Table 5. Standard Commands
Note: 1. X = Don't Care, WA=Word Address in targeted bank, RD=Read Data, SRD=Status Register Data, ESD=Electronic Signature Data,
QD=Query Data, BA=Block Address, BKA= Bank Address, PD=Program Data, PRA=Protection Register Address, PRD=Protection
Register Data, CRD=Configuration Register Data.
2. Must be same bank as in the first cycle. The signature addresses are listed in Table 7.
3. Any address within the bank can be used.
4. n+1 is the number of Words to be programmed.
Commands
Bus Operations
1st Cycle
2nd Cycle
Op.
Add
Data
Op.
Add
Data
Read Array
1+
Write
BKA
FFh
Read
WA
RD
Read Status Register
1+
Write
BKA
70h
Read
BKA(2)
SRD
Read Electronic Signature
1+
Write
BKA
90h
Read
BKA(2)
ESD
Read CFI Query
1+
Write
BKA
98h
Read
BKA(2)
QD
Clear Status Register
1
Write
BKA
50h
Block Erase
2
Write
BKA or
BA(3)
20h
Write
BA
D0h
Program
2
Write
BKA or
WA(3)
40h or 10h
Write
WA
PD
Buffer Program
n+4
Write
BA
E8h
Write
BA
n
Write
PA1
PD1
Write
PA2
PD2
Write
PAn+1
PDn+1
Write
X
D0h
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Protection Register Program
2
Write
PRA
C0h
Write
PRA
PRD
Set Configuration Register
2
Write
CRD
60h
Write
CRD
03h
Block Lock
2
Write
BKA or
BA(3)
60h
Write
BA
01h
Block Unlock
2
Write
BKA or
BA(3)
60h
Write
BA
D0h
Block Lock-Down
2
Write
BKA or
BA(3)
60h
Write
BA
2Fh



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