AT25QL641 datasheet(42/80 Pages) RENESAS

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DS-AT25QL641-130 Rev. G

Page 42

Sep 14, 2022

AT25QL641 Datasheet

8.19 64-kByte Block Erase (D8h)

The 64 kB Block Erase command is to erase a 64-kByte block of memory. Prior to the Block Erase Command, a

Write Enable (06h) command must be issued. The command is initiated by driving the CS pin low and shifting the

command code D8h followed b y a 24-bit block address (A23-A0). See Figure 33 and Figure 34 below. The CS

pin must go high after the eighth bit of the last byte has been latched in, otherwise, the Block Erase command is

not executed. After CS is driven high, the self-timed Block Erase command commences for a time duration of tBE2

(see Table 26, AC Electrical Characteristics).

While the block erase operation is in progress, the Read Status Register (05h) command may still be used to

read the status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the

cycle is finished and the device is ready to accept other commands again. When the BUSY bit is asserted, the

Write Enable Latch (WEL) bit in the Status Register is cleared to 0.

Figure 33. 64-kByte Block Erase Command (SPI Mode)

Figure 34. 64-kByte Block Erase Command (QPI Mode)

246

Mode 3

Mode 0

Mode 3

Mode 0

High-Impedance

SCK

Command (D8h)

24-Bit Address

MSB

SCK

2345

Mode 3

Command

D8h

A23-16

A15-8

A7-0

Mode 0

Mode 3

Mode 0

MSB

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