ST72361 datasheet(190/224 Pages) STMICROELECTRONICS

190 / 224 page

ST72361

190/224

12.7 MEMORY CHARACTERISTICS

12.7.1 RAM and Hardware Registers

12.7.2 FLASH Memory

Notes:

1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-

isters (only in HALT mode). Not tested in production.

2. Data based on characterization results, not tested in production.

3. VPP must be applied only during the programming or erasing operation and not permanently for reliability reasons.

4. Data based on simulation results, not tested in production.

5. In Write / erase mode the IDD supply current consumption is the same as in Run mode (see Section 12.2.2)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode1)

HALT mode (or RESET)

1.6

DUAL VOLTAGE HDFLASH MEMORY

Symbol

Parameter

Conditions

Min2)

Typ

Max2)

Unit

fCPU

Operating frequency

Read mode

MHz

Write / Erase mode

VPP

Programming voltage3)

4.5V

≤ V

DD ≤ 5.5V

11.4

12.6

IPP

VPP current

4)5)

Read (VPP = 12V)

200

µA

Write / Erase

tVPP

Internal VPP stabilization time

104)

µs

tRET

Data retention

TA = 85°C

years

TA = 105°C

TA = 125°C

NRW

Write erase cycles

TA = 25°C

100

cycles

TPROG

TERASE

Programming or erasing temperature

range

-40

°C

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