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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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S75WS256NDFBAWMB 데이터시트(PDF) 70 Page - SPANSION |
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S75WS256NDFBAWMB 데이터시트(HTML) 70 Page - SPANSION |
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70 / 216 page  68 S75WS256Nxx Based MCPs S75WS-N-00_A0 February 17, 2005 Ad van c e Inf o rmation 12.7 DC Characteristics (CMOS Compatible) Notes: 1. Maximum ICC specifications are tested with VCC = VCCmax. 2. VCC= VIO. 3. CE# must be set high when measuring the RDY pin. 4. The ICC current listed is typically less than 3 mA/MHz, with OE# at VIH. 5. ICC active while Embedded Erase or Embedded Program is in progress. 6. Device enters automatic sleep mode when addresses are stable for tACC + 20 ns. Typical sleep mode current is equal to ICC3. 7. VIH = VCC ± 0.2 V and VIL > –0.1 V. 8. Total current during accelerated programming is the sum of VACC and VCC currents. 9. VACC = VHH on ACC input. 10. The content in this document is Advance information for the S29WS064N and S29WS128N. Content in this document is Preliminary for the S29W256N. Parameter Description (Notes) Test Conditions (Notes 1, 2, 9) Min Typ Max Unit ILI Input Load Current VIN = VSS to VCC, VCC = VCCmax ±1 µA ILO Output Leakage Current (3) VOUT = VSS to VCC, VCC = VCCmax ±1 µA ICCB VCC Active burst Read Current CE# = VIL, OE# = VIH, WE# = VIH, burst length = 8 54 MHz 27 54 mA 66 MHz 28 60 mA 80 MHz 30 66 mA CE# = VIL, OE# = VIH, WE# = VIH, burst length = 16 54 MHz 28 48 mA 66 MHz 30 54 mA 80 MHz 32 60 mA CE# = VIL, OE# = VIH, WE# = VIH, burst length = 32 54 MHz 29 42 mA 66 MHz 32 48 mA 80 MHz 34 54 mA CE# = VIL, OE# = VIH, WE# = VIH, burst length = Continuous 54 MHz 32 36 mA 66 MHz 35 42 mA 80 MHz 38 48 mA IIO1 VIO Non-active Output OE# = VIH 20 30 µA ICC1 VCC Active Asynchronous Read Current (4) CE# = VIL, OE# = VIH, WE# = VIH 10 MHz 27 36 mA 5 MHz 13 18 mA 1 MHz 3 4 mA ICC2 VCC Active Write Current (5) CE# = VIL, OE# = VIH, ACC = VIH VACC 15 µA VCC 19 52.5 mA ICC3 VCC Standby Current (6, 7) CE# = RESET# = VCC ± 0.2 V VACC 15 µA VCC 20 40 µA ICC4 VCC Reset Current (7) RESET# = VIL, CLK = VIL 70 150 µA ICC5 VCC Active Current (Read While Write) (7) CE# = VIL, OE# = VIH, ACC = VIH @ 5 MHz 50 60 mA ICC6 VCC Sleep Current (7) CE# = VIL, OE# = VIH 240 µA IACC Accelerated Program Current (8) CE# = VIL, OE# = VIH, VACC = 9.5 V VACC 620 mA VCC 14 20 mA VIL Input Low Voltage VIO = 1.8 V –0.5 0.4 V VIH Input High Voltage VIO = 1.8 V VIO – 0.4 VIO + 0.4 V VOL Output Low Voltage IOL = 100 µA, VCC = VCC min = VIO 0.1 V VOH Output High Voltage IOH = –100 µA, VCC = VCC min = VIO VIO – 0.1 V VHH Voltage for Accelerated Program 8.5 9.5 V VLKO Low VCC Lock-out Voltage 1.0 1.4 V |
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