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SST25WF080B 데이터시트(PDF) 24 Page - Microchip Technology |
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SST25WF080B 데이터시트(HTML) 24 Page - Microchip Technology |
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24 / 44 page ![]() SST25WF080B DS20005164H-page 24 2013-2022 Microchip Technology Inc. and its subsidiaries 6.5 DC Characteristics TABLE 6-5: DC OPERATING CHARACTERISTICS Symbol Parameter Limits Test Conditions Min. Typ.(1) Max. Units IDDR Read Current 6 mA CE# = 0.1 VDD/0.9 VDD@30 MHz, SO = open; Single I/O IDDR2 Read Current 8 mA CE# = 0.1 VDD/0.9VDD@40 MHz, SO = open IDDR3 Read Current 10 mA CE# = 0.1 VDD/0.9VDD@40 MHz, SO = open; Dual I/O; IDDW Program and Erase Current 15 mA CE# = VDD ISB Standby Current Industrial 750 µA CE# = VDD, VIN =VDD or VSS Extended 770 µA CE# = VDD, VIN =VDD or VSS IDPD Deep Power-Down Industrial 210 µA CE# = VDD, VIN =VDD or VSS Extended 250 µA CE# = VDD, VIN =VDD or VSS ILI Input Leakage Current 2 µA VIN = GND to VDD, VDD =VDD Max ILO Output Leakage Current 2 µA VOUT = GND to VDD, VDD =VDD Max VIL Input Low Voltage -0.3 0.3 V VDD =VDD Min VIH Input High Voltage 0.7 VDD VDD+0.3 V VDD =VDD Max VOL Output Low Voltage 0.2 V IOL = 100 µA, VDD =VDD Min VOH Output High Voltage VDD-0.2 V IOH = -100 µA, VDD =VDD Min Note 1: Value characterized, not fully tested in production. TABLE 6-6: CAPACITANCE (TA = 25°C, F = 1 MHZ, OTHER PINS OPEN) Parameter Description Test Condition Maximum COUT(1) Output Pin Capacitance VOUT =0V 12 pF CIN(1) Input Capacitance VIN =0V 6 pF Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 6-7: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND(1) Endurance 100,000 Cycles JEDEC Standard A117 Status Register Write Cycle 100,000 Cycles JEDEC Standard A117 TDR(1) Data Retention 20 Years JEDEC Standard A103 ILTH(1) Latch Up 100 + IDD mA JEDEC Standard 78 Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. |
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