 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
SST25WF080B 데이터시트(PDF) 1 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
SST25WF080B 데이터시트(HTML) 1 Page - Microchip Technology |
|
|
1 / 44 page  2013-2022 Microchip Technology Inc. and its subsidiaries DS20005164H-page 1 SST25WF080B Features • Single Voltage Read and Write Operations - 1.65V-1.95V • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 • High-Speed Clock Frequency -40 MHz • Dual Input/Output Support - Fast-Read Dual-Output Instruction (3BH) - Fast-Read Dual I/O Instruction (BBH) • Superior Reliability - Endurance: 100,000 Cycles - Greater than 20 years Data Retention • Ultra-Low Power Consumption: - Active Read current: 4 mA (typical) - Standby current: 7 µA (typical) - Deep Power-down current: 2 µA (typical) • Flexible Erase Capability - Uniform 4-Kbyte sectors - Uniform 64-Kbyte overlay blocks • Page Program Mode - 256 bytes/Page • Fast Erase and Page-Program: - Chip Erase time: 500 ms (typical) - Sector Erase time: 40 ms (typical) - Block Erase time: 80 ms (typical) - Page Program time: 0.8 ms/ 256 bytes (typical) • End-of-Write Detection - Software polling the BUSY bit in STATUS Regis- ter • Hold Pin (HOLD#) - Suspend a serial sequence without deselecting the device • Write Protection (WP#) - Enables/Disables the Lock-Down function of the STATUS register • Software Write Protection - Write protection through Block-Protection bits in STATUS register • Temperature Range - Industrial: -40°C to +85°C - Extended: -40°C to +125°C - AECQ-100 Qualified • All devices are RoHS compliant Packages • 8-lead SOIC (150 mils) • 8-contact USON (2 mm x 3 mm) Product Description SST25WF080B is a member of the Serial Flash 25 Series family and feature a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SPI serial flash memory is manufactured with proprietary, high-performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. This Serial Flash significantly improve performance and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power supply of 1.65V-1.95V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy con- sumed during any Erase or Program operation is less than alternative flash memory technologies. See Figure 2-1 for the pin assignments. 8-Mbit, 1.8V, SPI Serial Flash |
유사한 부품 번호 - SST25WF080B |
|
유사한 설명 - SST25WF080B |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
