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STPMIC25APQR 데이터시트(PDF) 24 Page - STMicroelectronics

부품명 STPMIC25APQR
상세설명  Highly integrated power management IC for microprocessor units
PDF  145 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STPMIC25APQR 데이터시트(HTML) 24 Page - STMicroelectronics

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Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
1.8 V < VOUT < 3.3 V, HP mode
mV
VOUT-OVR
Power-up overshoot
2.8 V < VBUCKIN < 5.5 V, IOUT = 1 mA, TA = 25 °C
1.5 V < VOUT< 4.2 V
5
tLP-HP-BCK
Recovery time from
LP to HP mode
VOUT_LP = VOUT_HP
60 (4)
µs
tSU_BCK
Startup delay (delay
before voltage starts
to rise)
Delay time from PWRCTRL signal
(PWRCTRL_DLY =0)
25 (3)
40 (4)
µs
tSS_BCK
Soft-start duration
2.8 V < VBUCKIN<5.5 V
1 mA < IOUT <100 mA
VOUT=4.2 V
235
400
µs
SRBCK
Output voltage slew
rate
Slew rate during startup
10.3
17.5
mV/µs
DVS slew rate of a voltage programmed change low to high or high to
low, from VOUT = 1.5 V to 4.2 V
2
3.1
tSD_BCK
Shutdown duration
From VOUT = 3.3 V to VOUT < 0.2 V,
2.8 V < VBUCKIN < 5.5 V, IOUT < 1 mA
slow PD
1.5
ms
From VOUT = 3.3 V to VOUT < 0.2 V,
2.8 V < VBUCKIN < 5.5 V, IOUT < 1 mA
fast PD
0.3
1. Guaranteed by design - not tested in production. Load transient performances are strongly impacted by the external passive components
characteristics. The load transient is also influenced by the parasitic elements of the PCB layout. For more info see the forthcoming AN.
2. The output ripple voltage is the result of the inductor ripple current flowing through the output capacitor and depends on the capacitance
value, ESR, and ESL. The actual output ripple voltage is also influenced by the parasitic elements of the PCB layout.
3. See 1: startup sequence.
4. Guaranteed by design - not tested in production.
STPMIC25
Electrical and timing characteristics
DS14278 - Rev 3
page 24/145



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