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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FS32K142HAT0MLHT 데이터시트(PDF) 36 Page - NXP Semiconductors |
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FS32K142HAT0MLHT 데이터시트(HTML) 36 Page - NXP Semiconductors |
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36 / 84 page  Table 23. Flash command timing specifications for S32K14x (continued) Symbol Description1 S32K142 S32K144 S32K146 S32K148 Typ Max Typ Max Typ Max Typ Max Unit Notes setting (32-bit write complete, ready for next 32-bit write) Last (Nth) 32-bit write (time for write only, not cleanup) 200 550 200 550 200 550 200 550 tquickwrClnup Quick Write Cleanup execution time — — (# of Quick Writes ) * 2.0 — (# of Quick Writes ) * 2.0 — (# of Quick Writes ) * 2.0 — (# of Quick Writes ) * 2.0 ms 7 1. All command times assumes 25 MHz or greater flash clock frequency (for synchronization time between internal/external clocks). 2. Maximum times for erase parameters based on expectations at cycling end-of-life. 3. For all EEPROM Emulation terms, the specified timing shown assumes previous record cleanup has occurred. This may be verified by executing FCCOB Command 0x77, and checking FCCOB number 5 contents show 0x00 - No EEPROM issues detected. 4. 1st time EERAM writes after a Reset or SETRAM may incur additional overhead for EEE cleanup, resulting in up to 2× the times shown. 5. Only after the Nth write completes will any data be valid. Emulated EEPROM record scheme cleanup overhead may occur after this point even after a brownout or reset. If power on reset occurs before the Nth write completes, the last valid record set will still be valid and the new records will be discarded. 6. Quick Write times may take up to 550 µs, as additional cleanup may occur when crossing sector boundaries. 7. Time for emulated EEPROM record scheme overhead cleanup. Automatically done after last (Nth) write completes, assuming still powered. Or via SETRAM cleanup execution command is requested at a later point. Table 24. Flash command timing specifications for S32K11x Symbol Description1 S32K116 S32K118 Typ Max Typ Max Unit Notes trd1blk Read 1 Block execution time 32 KB flash — 0.36 — 0.36 ms 64 KB flash — — — — 128 KB flash — 1.2 — — 256 KB flash — — — 2 512 KB flash — — — — trd1sec Read 1 Section execution time 2 KB flash — 75 — 75 µs 4 KB flash — 100 — 100 tpgmchk Program Check execution time — — 100 — 100 µs tpgm8 Program Phrase execution time — 90 225 90 225 µs tersblk Erase Flash Block execution time 32 KB flash 15 300 15 300 ms 2 64 KB flash — — — — 128 KB flash 120 1100 — — 256 KB flash — — 250 2125 512 KB flash — — — — Table continues on the next page... Memory and memory interfaces S32K1xx Data Sheet, Rev. 9, 09/2018 36 NXP Semiconductors |
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