PESDXV4UF_G_W_3

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 03 — 28 January 2008

3 of 16

NXP Semiconductors

PESDxV4UF/G/W

Very low capacitance quadruple ESD protection diode arrays

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform according to IEC 61000-4-5.

[2]

For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.

[3]

For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin 2.

Table 4.

Ordering information

Type number

Package

Name

Description

Version

PESD3V3V4UF

XSON6

plastic extremely thin small outline package;

no leads; 6 terminals; body 1

× 1.45 × 0.5 mm

SOT886

PESD5V0V4UF

PESD3V3V4UG

SC-88A

plastic surface-mounted package; 5 leads

SOT353

PESD5V0V4UG

PESD3V3V4UW

-

plastic surface-mounted package; 5 leads

SOT665

PESD5V0V4UW

Table 5.

Marking codes

Type number

Marking code[1]

PESD3V3V4UF

A7

PESD5V0V4UF

A8

PESD3V3V4UG

V1*

PESD5V0V4UG

V2*

PESD3V3V4UW

W1

PESD5V0V4UW

W2

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

peak pulse power

[1][2][3] -16

W

peak pulse current

[1][2][3] -

1.5

A

Per device

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C