PESDXV4UF_G_W_3

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 03 — 28 January 2008

4 of 16

NXP Semiconductors

PESDxV4UF/G/W

Very low capacitance quadruple ESD protection diode arrays

[1]

Device stressed with ten non-repetitive ESD pulses.

[2]

For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.

[3]

For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin 2.

Table 7.

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

electrostatic discharge voltage

IEC 61000-4-2

(contact discharge)

[1][2][3] -12

kV

MIL-STD-883 (human

body model)

-10

kV

Table 8.

ESD standards compliance

Standard

Conditions

Per diode

IEC 61000-4-2; level 4 (ESD)

> 8 kV (contact)

MIL-STD-883; class 3 (human body model)

> 4 kV

Fig 1.

8/20

µs pulse waveform according to

IEC 61000-4-5

Fig 2.

ESD pulse waveform according to

IEC 61000-4-2

t (

µs)

040

30

10

20

001aaa630

40

80

120

(%)

0

001aaa631

100 %

90 %

t

30 ns

60 ns

10 %