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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ST72260G 데이터시트(PDF) 135 Page - STMicroelectronics |
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ST72260G 데이터시트(HTML) 135 Page - STMicroelectronics |
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135 / 171 page  ST72260G, ST72262G, ST72264G 135/171 13.6 MEMORY CHARACTERISTICS 13.6.1 RAM and Hardware Registers 13.6.2 XFlash Program Memory Notes: 1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg- isters (only in HALT mode). Guaranteed by construction, not tested in production. 2. Up to 32 bytes can be programmed at a time. 3. The data retention time increases when the TA decreases. 4. Data based on reliability test results and monitored in production. 5. Data based on characterization results, not tested in production. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode 1) HALT mode (or RESET) 1.6 V Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for Flash write/ erase 2.4 5.5 V tprog Programming time for 1~32 bytes 2) TA=−40 to +85°C 5 10 ms Programming time for 1.5kBytes TA=+25°C 0.24 0.48 tRET Data retention 4) TA=+55°C 3) 20 years NRW Write erase cycles TA=+25°C 10 kcycles IDD Supply current Read / Write / Erase modes fCPU = 8MHz, VDD = 5.5V 2.63) mA No Read/No Write Mode 100 µA Power down mode / HALT 0 0.15) µA |
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