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ST72260G 데이터시트(PDF) 16 Page - STMicroelectronics |
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ST72260G 데이터시트(HTML) 16 Page - STMicroelectronics |
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16 / 171 page ![]() ST72260G, ST72262G, ST72264G 16/171 FLASH PROGRAM MEMORY (Cont’d) 4.5 Memory Protection There are two different types of memory protec- tion: Read Out Protection and Write/Erase Protec- tion which can be applied individually. 4.5.1 Read out Protection Read out protection, when selected, makes it im- possible to extract the memory content from the microcontroller, thus preventing piracy. In flash devices, this protection is removed by re- programming the option. In this case the program memory is automatically erased and the device can be reprogrammed. Read-out protection selection depends on the de- vice type: – In Flash devices it is enabled and removed through the FMP_R bit in the option byte. – In ROM devices it is enabled by mask option specified in the Option List. 4.5.2 Flash Write/Erase Protection Write/erase protection, when set, makes it impos- sible to both overwrite and erase program memo- ry. Its purpose is to provide advanced security to applications and prevent any change being made to the memory content. Warning: Once set, Write/erase protection can never be removed. A write-protected flash device is no longer reprogrammable. Write/erase protection is enabled through the FMP_W bit in the option byte. 4.6 Register Description FLASH CONTROL/STATUS REGISTER (FCSR) Read /Write Reset Value: 000 0000 (00h) 1st RASS Key: 0101 0110 (56h) 2nd RASS Key: 1010 1110 (AEh) Note: This register is reserved for programming using ICP, IAP or other programming methods. It controls the XFlash programming and erasing op- erations. For details on XFlash programming, refer to the ST7 Flash Programming Reference Manual. When an EPB or another programming tool is used (in socket or ICP mode), the RASS keys are sent automatically. 70 000 00 OPT LAT PGM |
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