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STLC5466 데이터시트(PDF) 110 Page - STMicroelectronics |
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STLC5466 데이터시트(HTML) 110 Page - STMicroelectronics |
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110 / 130 page ![]() STLC5466 110/130 3 SDRAM MEMORY TIMING Figure 3-1: Signals exchanged between SDRAM controller and SDRAM Parameter T min T max Unit T 1/T= 33, 50 or 66 MHz ts Data in set up time 3 ns th Data in Hold time 2 ns td Delay between rising edge of CLK and each signal delivered by the Multi-HDLC CL= 5 pF (Vdd = 3.3V ± 5% Temp 0 to 70°C) CL= 30 pF CL= 50 pF 3 3 3 10 12 20 ns ns ns Signals provided by the Multi-HDLC and received from the Synchronous Dynamic Memory MCLK is an input. Clock provided by an external clock generation Input: Data from SDRAM Output: signals to SDRAM ts th 2.0 1.4 0.8 2.0 1.4 0.8 td T |
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