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MSC7119 데이터시트(PDF) 26 Page - Freescale Semiconductor, Inc |
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MSC7119 데이터시트(HTML) 26 Page - Freescale Semiconductor, Inc |
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26 / 60 page ![]() MSC7119 Data Sheet, Rev. 8 Electrical Characteristics Freescale Semiconductor 26 2.5.4 DDR DRAM Controller Timing This section provides the AC electrical characteristics for the DDR DRAM interface. 2.5.4.1 DDR DRAM Input AC Timing Specifications Table 17 provides the input AC timing specifications for the DDR DRAM interface. 2.5.4.2 DDR DRAM Output AC Timing Specifications Table 18 and Table 19 list the output AC timing specifications and measurement conditions for the DDR DRAM interface. Table 17. DDR DRAM Input AC Timing No. Parameter Symbol Min Max Unit — AC input low voltage VIL —VREF – 0.31 V — AC input high voltage VIH VREF + 0.31 VDDM + 0.3 V 201 Maximum Dn input setup skew relative to DQSn input — — 900 ps 202 Maximum Dn input hold skew relative to DQSn input — — 900 ps Notes: 1. Maximum possible skew between a data strobe (DQSn) and any corresponding bit of data (D[8n + {0...7}] if 0 ≤ n ≤ 7). 2. See Table 18 for tCK value. 3. Dn should be driven at the same time as DQSn. This is necessary because the DQSn centering on the DQn data tenure is done internally. Figure 5. DDR DRAM Input Timing Diagram Table 18. DDR DRAM Output AC Timing No. Parameter Symbol Min Max Unit 200 CK cycle time, (CK/CK crossing)1 • 100 MHz (DDR200) • 150 MHz (DDR300) tCK 10 6.67 — — ns ns 204 An/RAS/CAS/WE/CKE output setup with respect to CK tDDKHAS 0.5 × tCK – 1000 — ps 205 An/RAS/CAS/WE/CKE output hold with respect to CK tDDKHAX 0.5 × tCK – 1000 — ps 206 CSn output setup with respect to CK tDDKHCS 0.5 × tCK – 1000 — ps 207 CSn output hold with respect to CK tDDKHCX 0.5 × tCK – 1000 — ps 208 CK to DQSn2 tDDKHMH –600 600 ps Dn DQSn D1 D0 201 202 202 201 Note: DQS centering is done internally. |
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