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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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7733 데이터시트(PDF) 420 Page - Renesas Technology Corp |
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7733 데이터시트(HTML) 420 Page - Renesas Technology Corp |
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420 / 940 page  APPLICATIONS 7733 Group User’s Manual 17–13 When using an external memory which outputs data within an interval of tpxz(E-DZ) after signal _ E’s falling edge When there is a possibility that the tail of an address collides with the head of data because the _ external memory outputs data within an interval of tpxz(E-DZ) after signal E’s falling edge, delay only _ ___ the E’s front falling edge. In this case, the falling edge of the read signal (OE) for the memory, which __ is generated from signal E, is delayed. (Refer to Figure 17.1.8.) 17.1 Memory expansion Fig. 17.1.8 Timing example when data output is delayed External memory output enable signal (Read signal) Address output External memory data output tpxz(E-DZ) E OE d Address Address Data ten(OE) ta(OE) Satisfy the following conditions: • tpxz(E-DZ) ≤ ten(OE)+d • When ten(OE) ≤ tpxz(E-DZ) (= 5 ns), make sure that signal E’s falling edge precedes signal OE’s falling edge and an interval of “d” is secured. Note: (The others are specifications of external memory.) : Specifications of 7733 Group |
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