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PC912XDP512F0MPVR 데이터시트(PDF) 1124 Page - Freescale Semiconductor, Inc |
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PC912XDP512F0MPVR 데이터시트(HTML) 1124 Page - Freescale Semiconductor, Inc |
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1124 / 1348 page ![]() Chapter 27 512 Kbyte Flash Module (S12XFTX512K4V2) MC9S12XDP512 Data Sheet, Rev. 2.21 1126 Freescale Semiconductor All bits read 0 and are not writable. 27.3.2.14 RESERVED4 This register is reserved for factory testing and is not accessible. All bits read 0 and are not writable. 27.4 Functional Description 27.4.1 Flash Command Operations Write operations are used to execute program, erase, erase verify, erase abort, and data compress algorithms described in this section. The program and erase algorithms are controlled by a state machine whose timebase, FCLK, is derived from the oscillator clock via a programmable divider. The command register, as well as the associated address and data registers, operate as a buffer and a register (2-stage FIFO) so that a second command along with the necessary data and address can be stored to the buffer while the first command is still in progress. This pipelined operation allows a time optimization when programming more than one word on a specific row in the Flash block as the high voltage generation can be kept active in between two programming commands. The pipelined operation also allows a simplification of command launching. Buffer empty as well as command completion are signalled by flags in the Flash status register with corresponding interrupts generated, if enabled. The next sections describe: 1. How to write the FCLKDIV register 2. Command write sequences to program, erase, erase verify, erase abort, and data compress operations on the Flash memory 3. Valid Flash commands 4. Effects resulting from illegal Flash command write sequences or aborting Flash operations 76543210 R 00000000 W Reset 00000000 = Unimplemented or Reserved Figure 27-22. RESERVED3 76543210 R 00000000 W Reset 00000000 = Unimplemented or Reserved Figure 27-23. RESERVED4 |
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