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M48T129V 데이터시트(PDF) 11 Page - STMicroelectronics

부품명 M48T129V
상세설명  5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER짰 SRAM
PDF  28 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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M48T129V 데이터시트(HTML) 11 Page - STMicroelectronics

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M48T129V, M48T129Y
Operating modes
Doc ID 5710 Rev 4
11/28
Table 4.
WRITE mode AC characteristics
2.3
Data retention mode
With valid VCC applied, the M48T129Y/V operates as a conventional BYTEWIDE™ static
RAM. Should the supply voltage decay, the RAM will automatically deselect, write protecting
itself when VCC falls between VPFD (max), VPFD (min) window. All outputs become high
impedance and all inputs are treated as “Don't care.”
Note:
A power failure during a WRITE cycle may corrupt data at the current addressed location,
but does not jeopardize the rest of the RAM's content. At voltages below VPFD (min), the
memory will be in a write protected state, provided the VCC fall time is not less than tF. The
M48T129Y/V may respond to transient noise spikes on VCC that cross into the deselect
window during the time the device is sampling VCC. Therefore, decoupling of the power
supply lines is recommended.
When VCC drops below VSO, the control circuit switches power to the internal battery,
preserving data and powering the clock. The internal energy source will maintain data in the
M48T129Y/V for an accumulated period of at least 10 years at room temperature. As
system power rises above VSO, the battery is disconnected, and the power supply is
switched to external VCC. Deselect continues for tREC after VCC reaches VPFD (max). For a
further more detailed review of lifetime calculations, please see application note AN1012.
Symbol
Parameter(1)
1.
Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where
noted).
M48T129Y
M48T129V
Unit
–70
–85
Min
Max
Min
Max
tAVAV
WRITE cycle time
70
85
ns
tAVWL
Address valid to WRITE enable low
0
0
ns
tAVEL
Address valid to chip enable low
0
0
ns
tWLWH
WRITE enable pulse width
50
60
ns
tELEH
Chip enable low to chip enable high
55
65
ns
tWHAX
WRITE enable high to address transition
5
5
ns
tEHAX
Chip enable high to address transition
10
15
ns
tDVWH
Input valid to WRITE enable high
30
35
ns
tDVEH
Input valid to chip enable high
30
35
ns
tWHDX
WRITE enable high to input transition
5
5
ns
tEHDX
Chip enable high to input transition
10
15
ns
tWLQZ
(2)(3)
2.
CL = 5 pF.
3.
If E goes low simultaneously with W going low, the outputs remain in the high impedance state.
WRITE enable low to output Hi-Z
25
30
ns
tAVWH
Address valid to WRITE enable high
60
70
ns
tAVEH
Address valid to chip enable high
60
70
ns
tWHQX
(2)(3)
WRITE enable high to output transition
5
5
ns



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