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MPC5125 데이터시트(PDF) 41 Page - Freescale Semiconductor, Inc |
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MPC5125 데이터시트(HTML) 41 Page - Freescale Semiconductor, Inc |
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41 / 94 page ![]() Electrical and Thermal Characteristics MPC5125 Microcontroller Data Sheet, Rev. 4 Freescale Semiconductor 41 1 4.1.4 Electrostatic Discharge CAUTION This device contains circuitry that protects against damage due to high-static voltage or electrical fields. However, it is advised that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages. Operational reliability is enhanced if unused inputs are tied to an appropriate logic voltage level (GND or VDD). Table 11 gives package thermal characteristics for this device. Table 7. General I/O Pads1 — Drive Current, Slew Rate NOTES: 1 General I/O—rise and fall times at drive load 50 pF. Pad Type Supply Voltage Drive Select/Slew Rate Control Rise time max (ns) Fall time max (ns) Current Ioh (mA) Current Iol (mA) SpecID General IO VDD_IO = 3.3 V Configuration 3 (11) 1.4 1.6 35 35 D3.41 Configuration 2 (10) 9.8 12 D3.42 Configuration 1 (01) 19 24 D3.43 Configuration 0 (00) 140 183 D3.44 Table 8. DDR I/O Pads1 — Drive Current, Slew Rate NOTES: 1 DDR—rise and fall times at 50 transmission line impedance terminated to MV TT (0.5 VDD_IO_MEM) + 4 pF load. Pad Type Supply Voltage Drive Select/ Slew Rate Control Rising slew max (ns)2 2 Rising slew rate measured between 0.5 × V DD_IO_MEM – 450 mV and 0.5 × VDD_IO_MEM + 50 mV for all modes. Falling slew max (ns)3 3 Falling slew rate measured between 0.5 × V DD_IO_MEM + 50 mV and 0.5 × VDD_IO_MEM – 450 mV for all modes. Current Ioh (mA) Current Iol (mA) SpecID DDR VDD_IO_MEM = 2.5 V (DDR) Configuration 3 (011) 0.45 0.45 16.2 16.2 D3.45 VDD_IO_MEM = 1.8 V (LPDDR and SDR) Configuration 0 (000) 0.8 0.8 4.6 4.6 D3.46 Configuration 1 (001) 8.1 8.1 D3.47 VDD_IO_MEM = 1.8 V (DDR2) Configuration 2 (010) 0.7 0.7 5.3 5.3 D3.48 Configuration 6 (110) 13.4 13.4 D3.49 VDD_IO_MEM = 3.3 V (SDR) Configuration 7 (111) 0.45 0.45 8 8 D3.50 Table 9. ESD and Latch-Up Protection Characteristics Sym Rating Min Max Unit SpecID VHBM Human body model (HBM) — JEDEC JESD22-A114-B 2000 — V D4.1 VMM Machine model (MM) — JEDEC JESD22-A115 200 — V D4.2 VCDM Charge device model (CDM) — JEDEC JESD22-C101 250 — V D4.3 |
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