AT45DB081D_13 datasheet(51/53 Pages) AD

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3596O–DFLASH–1/2013

AT45DB081D

28. Revision History

Revision Level – Release Date

History

A – November 2005

Initial Release

B – March 2006

Added Preliminary.

Added text, in “Programming the Configuration Register”, to indicate

that power cycling is required to switch to “power of 2” page size

after the opcode enable has been executed.

Added “Legacy Commands” table.

C – July 2006

Corrected PA3 in opcode 50h for addressing sequence with

standard page size. Corrected Chip Erase opcode from 7CH to

C7H. Clarified the commands B and C usage for operation mode.

D – November 2006

Removed Preliminary.

Added errata regarding Chip Erase.

Changed various timing parameters under Table 18-4.

E – February 2007

Removed RDY/BUSY pin references.

F – August 2007

Removed SER/BYTE statement from SI and SO pin descriptions in

Table 2-1.

Added additional text to “power of 2” binary page size option.

Changed tVSCL from 50μs to 70μs.

Changed tRDPD from 30μs to 35μs.

G – January 2008

Added additional text, in “power of 2” binary page size option, to

indicate that the address format is changed for devices with page

size set to 256-bytes.

Corrected typographical error to indicate that Figure 13-1 indicates

Program Configuration Register.

H – January 2008

Removed DataFlash card pinout.

I – April 2008

Added part number ordering code details for suffixes SL954/955

Added ordering code details.

J – February 2009

Changed tDIS (Typ and Max) to 27ns and 35ns, respectively.

K – March 2009

Changed Deep Power-Down Current values

- Increased typical value from 5μA to 15μA.

- Increased maximum value from 15μA to25 μA.

L – April 2009

Updated Absolute Maximum Ratings

Removed Chip Erase Errata

M – May 2010

Changed tSE (Typ) 1.6 to 0.7 and (Max) 5 to 1.3

Changed tCE (Typ) TBD to 7 and (Max) TBD to 22

Changed from 10,000 to 20,000 cumulative page erase/program

operations and added the contact statement in section 11.3.

N – November 2012

Update to Adesto.

O - January 2013

change to 2 buffers in diagram 22-1

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