PIC16F883-ESLASHSO. datasheet(253/338 Pages) MICROCHIP

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 2006-2012 Microchip Technology Inc.

DS41291G-page 253

PIC16F882/883/884/886/887

17.3

DC Characteristics: PIC16F882/883/884/886/887-I (Industrial)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C

 TA  +85°C for industrial

Param

No.

Device Characteristics

Min.

Typ†

Max.

Units

Conditions

VDD

Note

D020

Power-down Base

Current(IPD)(2)

—

0.05

1.2

A

2.0

WDT, BOR, Comparators, VREF and

T1OSC disabled

—

0.15

1.5

A3.0

—

0.35

1.8

A5.0

—

150

500

3.0

-40°C

 TA  +25°C

D021

—

1.0

2.2

A

2.0

WDT Current(1)

—2.0

4.0

A3.0

—3.0

7.0

A5.0

D022

—

A

3.0

BOR Current(1)

—

122

A5.0

D023

—

A

2.0

Comparator Current(1), both

comparators enabled

—60

A3.0

—

120

160

A5.0

D024

—

A2.0

CVREF Current(1) (high range)

—45

A3.0

—75

A5.0

D025*

—

A2.0

CVREF Current(1) (low range)

—59

A3.0

—

124

A5.0

D026

—

2.0

5.0

A

2.0

T1OSC Current(1), 32.768 kHz

—2.5

5.5

A3.0

—3.0

7.0

A5.0

D027

—

0.30

1.6

A

3.0

A/D Current(1), no conversion in

progress

—

0.36

1.9

A5.0

D028

—

125

A

3.0

VP6 Reference Current

—

125

162

A5.0

* These parameters are characterized but not tested.

† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1:

The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this

peripheral is enabled. The peripheral

 current can be determined by subtracting the base IDD or IPD

current from this limit. Max values should be used when calculating total current consumption.

The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is

measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.

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