PIC16F883-ESLASHSO. datasheet(256/338 Pages) MICROCHIP

256 / 338 page

PIC16F882/883/884/886/887

DS41291G-page 256

 2006-2012 Microchip Technology Inc.

D100

IULP

Ultra Low-Power Wake-Up

Current

—

200

—

See Application Note AN879,

“Using the Microchip Ultra

Low-Power Wake-up Module”

(DS00879)

Capacitive Loading Specs

on Output Pins

D101* COSC2 OSC2 pin

—

In XT, HS and LP modes when

external clock is used to drive

OSC1

D101A

CIO

All I/O pins

—

Data EEPROM Memory

D120

Byte Endurance

100K

—

E/W -40°C

 TA +85°C

D120A ED

Byte Endurance

10K

100K

—

E/W +85°C

 TA +125°C

D121

VDRW

VDD for Read/Write

VMIN

—

5.5

Using EECON1 to read/write

VMIN = Minimum operating

voltage

D122

TDEW

Erase/Write Cycle Time

—

D123

TRETD

Characteristic Retention

—

Year Provided no other

specifications are violated

D124

TREF

Number of Total Erase/Write

Cycles before Refresh(4)

10M

—

E/W -40°C

 TA +85°C

Program Flash Memory

D130

Cell Endurance

10K

100K

—

E/W -40°C

 TA +85°C

D130A ED

Cell Endurance

10K

—

E/W +85°C

 TA +125°C

D131

VPR

VDD for Read

VMIN

—5.5

VMIN = Minimum operating

voltage

D132

VPEW

VDD for Row Erase/Write

VMIN

—5.5

VDD for Bulk Erase Opera-

tions

4.5

—

5.5

D133

TPEW

Erase/Write cycle time

—

2.5

D134

TRETD

Characteristic Retention

—

Year Provided no other

specifications are violated

17.5

DC Characteristics:

PIC16F882/883/884/886/887-I (Industrial)

PIC16F882/883/884/886/887-E (Extended) (Continued)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C

 TA  +85°C for industrial

-40°C

 TA  +125°C for extended

Param

No.

Sym.

Characteristic

Min.

Typ†

Max.

Units

Conditions

These parameters are characterized but not tested.

† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only

and are not tested.

Note 1:

In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an

external clock in RC mode.

Negative current is defined as current sourced by the pin.

The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels

represent normal operating conditions. Higher leakage current may be measured at different input voltages.

See Section 10.3.1 “Using the Data EEPROM” for additional information.

Including OSC2 in CLKOUT mode.

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