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M68ICS08GR 데이터시트(PDF) 164 Page - Freescale Semiconductor, Inc |
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M68ICS08GR 데이터시트(HTML) 164 Page - Freescale Semiconductor, Inc |
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164 / 408 page ![]() Flash Memory Technical Data MC68HC908GR8 — Rev 4.0 164 Flash Memory MOTOROLA Figure 11-2. FLASH Programming Flowchart Set HVEN bit Read the FLASH block protect register Write any data to any FLASH address within the row address range desired Wait for a time, tnvs Set PGM bit Wait for a time, tpgs Write data to the FLASH address to be programmed Wait for a time, tPROG Clear PGM bit Wait for a time, tnvh Clear HVEN bit Wait for a time, trcv Completed programming this row? Y N End of programming The time between each FLASH address change (step 7 to step 7), or must not exceed the maximum programming time, tPROG max. the time between the last FLASH address programmed to clearing PGM bit (step 7 to step 10) NOTE: 1 2 3 4 5 6 7 8 10 11 12 13 Algorithm for programming a row (32 bytes) of FLASH memory This row program algorithm assumes the row/s to be programmed are initially erased. Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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