W25X05CLZPIG datasheet(27/51 Pages) WINBOND

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W25X05CL/10CL/20CL

Publication Release Date: March 23, 2012

- 27 -

Revision B

8.2.17

Block Erase (D8h)

The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of

all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Block

Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS

pin low and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0) (see Figure 2).

The Block Erase instruction sequence is shown in figure 17.

The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not

done the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block

Erase instruction will commence for a time duration of tBE (See AC Characteristics). While the Block

Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the

status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the

cycle is finished and the device is ready to accept other instructions again. After the Block Erase cycle

has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase

instruction will not be executed if the addressed page is protected by the Block Protect (TB, BP1, and

BP0) bits (see Status Register Memory Protection table).

Figure 17. Block Erase Instruction Sequence Diagram

/CS

CLK

(IO

Mode 0

Mode 3

Instruction (D8h)

High Impedance

24-Bit Address

Mode 0

Mode 3

= MSB

W25X05CLZPIG 데이터시트(PDF) 27 Page - Winbond