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STM32F217VG 데이터시트(PDF) 86 Page - STMicroelectronics

부품명 STM32F217VG
상세설명  ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
PDF  175 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32F217VG 데이터시트(HTML) 86 Page - STMicroelectronics

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Electrical characteristics
STM32F21xxx
86/175
DocID17050 Rev 9
6.3.7
Wakeup time from low-power mode
The wakeup times given in Table 26 is measured on a wakeup phase with a 16 MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
Stop or Standby mode: the clock source is the RC oscillator
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 13.
APB2
SDIO
0.69
mA
TIM1
1.06
TIM8
1.03
TIM9
0.58
TIM10
0.37
TIM11
0.39
ADC1(4)
2.13
ADC2(4)
2.04
ADC3(4)
2.12
SPI1
1.20
USART1
0.38
USART6
0.37
1. External clock is 25 MHz (HSE oscillator with 25 MHz crystal) and PLL is on.
2. EN1 bit is set in DAC_CR register.
3. EN2 bit is set in DAC_CR register.
4. fADC = fPCLK2/2, ADON bit set in ADC_CR2 register.
Table 25. Peripheral current consumption (continued)
Peripheral(1)
Typical consumption at 25 °C
Unit
Table 26. Low-power mode wakeup timings
Symbol
Parameter
Min(1)
Typ(1)
Max(1)
Unit
tWUSLEEP(2)
Wakeup from Sleep mode
-
1
-
µs
tWUSTOP(2)
Wakeup from Stop mode (regulator in Run mode)
-
13
-
µs
Wakeup from Stop mode (regulator in low power mode)
-
17
40
Wakeup from Stop mode (regulator in low power mode
and Flash memory in Deep power down mode)
-110
-
tWUSTDBY(2)(3)
Wakeup from Standby mode
260
375
480
µs
1. Based on characterization, not tested in production.
2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.
3. tWUSTDBY minimum and maximum values are given at 105 °C and –45 °C, respectively.



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