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STM32L151VD 데이터시트(PDF) 71 Page - STMicroelectronics

부품명 STM32L151VD
상세설명  Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 384KB Flash
PDF  140 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32L151VD 데이터시트(HTML) 71 Page - STMicroelectronics

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STM32L151xD STM32L152xD
Electrical characteristics
Doc ID 022027 Rev 6
71/140
6.3.5
External clock source characteristics
High-speed external user clock generated from an external source
IDD (RTC)
0.4
µA
IDD (LCD)
3.1
IDD (ADC)
(4)
1450
IDD (DAC)
(5)
340
IDD (COMP1)
0.16
IDD (COMP2)
Slow mode
2
Fast mode
5
IDD (PVD / BOR)
(6)
2.6
IDD (IWDG)
0.25
1.
Data based on differential IDD measurement between all peripherals OFF an one peripheral with clock
enabled, in the following conditions: fHCLK = 32 MHz (range 1), fHCLK = 16 MHz (range 2), fHCLK = 4 MHz
(range 3), fHCLK = 64kHz (Low power run/sleep), fAPB1 = fHCLK, fAPB2 = fHCLK, default prescaler value for
each peripheral. The CPU is in Sleep mode in both cases. No I/O pins toggling. Not tested in production.
2.
HSI oscillator is OFF for this measure.
3.
In low power sleep and run mode, the Flash memory must always be in power-down mode.
4.
Data based on a differential IDD measurement between ADC in reset configuration and continuous ADC
conversion (HSI consumption not included).
5.
Data based on a differential IDD measurement between DAC in reset configuration and continuous DAC
conversion of VDD/2. DAC is in buffered mode, output is left floating.
6.
Including supply current of internal reference voltage.
Table 25.
Peripheral current consumption(1) (continued)
Peripheral
Typical consumption, VDD = 3.0 V, TA = 25 °C
Unit
Range 1,
VCORE=
1.8 V
VOS[1:0] =
01
Range 2,
VCORE=
1.5 V
VOS[1:0] =
10
Range 3,
VCORE=
1.2 V
VOS[1:0] =
11
Low power
sleep and
run
Table 26.
High-speed external user clock characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSE_ext
User external clock source
frequency
18
32
MHz
VHSEH
OSC_IN input pin high level voltage
0.7VDD
-VDD
V
VHSEL
OSC_IN input pin low level voltage
VSS
-0.3VDD
tw(HSE)
tw(HSE)
OSC_IN high or low time
12
-
-
ns
tr(HSE)
tf(HSE)
OSC_IN rise or fall time
-
-
20
Cin(HSE)
OSC_IN input capacitance
-
2.6
-
pF



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