STM32L151VD datasheet(82/140 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32L151xD STM32L152xD

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Doc ID 022027 Rev 6

Flash memory and data EEPROM

Table 35.

Flash memory and data EEPROM characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

Guaranteed by design, not tested in production.

Unit

VDD

Operating voltage

Read / Write / Erase

1.65

3.6

tprog

Programming time for

word or half-page

Erasing

3.28

3.94

Programming

3.28

3.94

IDD

Average current during

the whole programming /

erase operation

TA = 25 °C, VDD = 3.6 V

600

900

µA

Maximum current (peak)

during the whole

programming / erase

operation

-1.5

2.5

Table 36.

Flash memory and data EEPROM endurance and retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

Based on characterization not tested in production.

Typ Max

NCYC

(2)

Cycling (erase / write)

Program memory

TA = -40°C to

105 °C

kcycles

Cycling (erase / write)

EEPROM data memory

300

tRET

(2)

Characterization is done according to JEDEC JESD22-A117.

Data retention (program memory) after

10 kcycles at TA = 85 °C

TRET = +85 °C

years

Data retention (EEPROM data memory)

after 300 kcycles at TA = 85 °C

Data retention (program memory) after

10 kcycles at TA = 105 °C

TRET = +105 °C

Data retention (EEPROM data memory)

after 300 kcycles at TA = 105 °C

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