PRIXP425BD datasheet(80/112 Pages) INTEL

80 / 112 page

Intel® IXP42X Product Line and IXC1100 Control Plane Processor

Electrical Specifications

Datasheet

5.4.6

MDIO DC Parameters

NOTES:

1. These values are typical values seen by the manufacturing process and are not tested.

5.4.7

SDRAM Bus DC Parameters

NOTES:

1. VIH overshoot: VIH (MAX) = VCCP + 2 V for a pulse width < 3 ns, and the pulse width cannot be greater than

one third of the cycle rate.

2. VIL undershoot: VIL (MIN) = -2 V for a pulse width < 3 ns cannot be exceeded.

3. These values are typical values seen by the manufacturing process and are not tested.

Table 29.

MDIO DC Parameters

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Units

Notes

VIH

Input-high voltage

2.0

VIL

Input-low voltage

0.8

VOH

Output-high voltage

IOUT = -4 mA

2.4

VOL

Output-low voltage

IOUT = 4 mA

0.4

IIL

Input-leakage current

0 < VIN < VCCP

-10

µA

CIN

Input-pin capacitance

CINMDIO

Input-pin capacitance

Table 30.

SDRAM Bus DC Parameters

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Units

Notes

VIH

Input-high voltage

2.0

VIL

Input-low voltage

0.8

VOH

Output-high voltage

IOUT = -4 mA

2.4

VOL

Output-low voltage

IOUT = 4 mA

0.4

IIL

Input-leakage current

0 < VIN < VCCP

-5

µA

IOL

Output-leakage

current

0 < VIN < VCCP

-5

µA

CINCLK

Input-pin capacitance

CIO

I/O-pin capacitance

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