| 전자부품 데이터시트 검색엔진 |
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HM5259165B 데이터시트(PDF) 26 Page - Elpida Memory |
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HM5259165B 데이터시트(HTML) 26 Page - Elpida Memory |
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26 / 63 page ![]() HM5259165B/HM5259805B/HM5259405B-75/A6 Data Sheet E0118H10 26 Write with auto-precharge: In this operation, since precharge is automatically performed after completing a burst write or single write operation, a precharge command need not be executed after each write operation. The command executed for the same bank after the execution of this command must be the bank active (ACTV) command. In addition, an interval of l APW is required between the final valid data input and input of next command. Burst Write (Burst Length = 4) CLK Command DQ (input) lAPW IRAS ACTV WRIT A in0 in1 in2 in3 ACTV Note: Internal auto-precharge starts at the timing indicated by " ". and an interval of tRAS (lRAS) is required between previous active (ACTV) command and internal precharge " ". Single Write CLK Command DQ (input) lAPW IRAS ACTV WRIT A in ACTV Note: Internal auto-precharge starts at the timing indicated by " ". and an interval of tRAS (lRAS) is required between previous active (ACTV) command and internal precharge " ". |
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