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HM5259165B 데이터시트(PDF) 30 Page - Elpida Memory

부품명 HM5259165B
상세설명  512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 횞 16-bit 횞 4-bank/16-Mword 횞 8-bit 횞 4-bank /32-Mword 횞 4-bit 횞 4-bank PC/133, PC/100 SDRAM
PDF  63 Pages
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제조업체  ELPIDA [Elpida Memory]
홈페이지  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

HM5259165B 데이터시트(HTML) 30 Page - Elpida Memory

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HM5259165B/HM5259805B/HM5259405B-75/A6
Data Sheet E0118H10
30
Write command to Read command interval:
1. Same bank, same ROW address: When the read command is executed at the same ROW address of the
same bank as the preceding write command, the read command can be performed after an interval of no less
than 1 clock. However, in the case of a burst write, data will continue to be written until one clock before the
read command is executed.
WRITE to READ Command Interval (1)
CLK
Command
Din
WRIT
READ
in A0
out B1
out B2
out B3
out B0
Dout
Column = A
Write
Column = B
Read
Column = B
Dout
CAS Latency
DQM,
DQMU/DQML
Burst Write Mode
CAS Latency = 2
Burst Length = 4
Bank 0
WRITE to READ Command Interval (2)
CLK
Command
Din
WRIT
READ
in A0
out B1
out B2
out B3
out B0
Dout
Column = A
Write
Column = B
Read
Column = B
Dout
CAS Latency
in A1
DQM,
DQMU/DQML
Burst Write Mode
CAS Latency = 2
Burst Length = 4
Bank 0
2. Same bank, different ROW address: When the ROW address changes, consecutive read commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank: When the bank changes, the read command can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. However, in the case of a burst write,
data will continue to be written until one clock before the read command is executed (as in the case of the
same bank and the same address).



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