AN4544 datasheet(13/35 Pages) STMICROELECTRONICS

13 / 35 page

DocID026535 Rev 1

13/35

AN4544

Datasheet explanation

2.4.3

Forward biased safe operating area (FBSOA)

This shows the collector current IC as a function of the collector-emitter voltage VCE at

different pulses.

Figure 9. Forward bias safe operating area

This area is limited by the conduction loss VCE(sat) at maximum junction

temperature.

The top limit is related to the maximum pulsed collector current.

This area depends on the pulse length of the applied power pulse, the thermal

impedance changes and leads to different maximum power losses. For a given

pulse length, the thermal impedance ZthJC has to be determined by looking at the

specific diagram.

The maximum breakdown voltage V(BR)CES is determined by the technology and

limits the diagram on the right-hand side.

2.4.4

Peak of collector current ratings (ICP)

These ratings indicate how much pulsed current the device can handle, which is

significantly higher than the rated continuous current.

The purposes of ICP ratings are:

•

Keeping IGBT operating conditions in the “linear” region of its transfer characteristic

(see Figure 10). There is a maximum collector current for a respective gate-emitter

voltage that the IGBT conducts. If the operating point at a given gate-emitter voltage

100

0.1

0.01

(A)

VCE(V)

10μs

100μs

1ms

100

Single pulse, Tc=25°C

Tj<175°C, VGE=15V

(b)

(a)

(c)

(d)

AM17392v1

Table 3. Pulsed IC details in absolute maximum ratings

Symbol

Parameter

Value

Unit

ICP

(1)

Pulse width limited by maximum junction temperature.

Pulsed collector current

160

AN4544 데이터시트(PDF) 13 Page - STMicroelectronics

AN4544 데이터시트(HTML) 13 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

데이터시트 다운로드

링크 URL