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AN4544 데이터시트(PDF) 18 Page - STMicroelectronics |
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AN4544 데이터시트(HTML) 18 Page - STMicroelectronics |
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18 / 35 page ![]() Datasheet explanation AN4544 18/35 DocID026535 Rev 1 2.5 Static characteristics These describe the behavior of the device in steady-state conditions either in the off-state or in conduction. Table 8. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 2 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 40 A 1.8 2.3 V VGE = 15 V, IC = 40 A TJ = 125 °C 2.15 VGE = 15 V, IC = 40 A TJ = 175 °C 2.35 VF Forward on-voltage IF = 40 A 1.7 2.45 V IF = 40 A, TJ = 125 °C 1.4 V IF = 40 A, TJ = 175 °C 1.3 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V ICES Collector cut-off current (VGE = 0) VCE = 600 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA |
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