DocID026535 Rev 1

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AN4544

Datasheet explanation

35

2.7

IGBT switching characteristics (inductive load)

This section describes the behavior of the device during the two transitional states: from off-

state to on-state and from on-state to off-state. IGBT and Power MOSFET switching

characteristics are very similar. The major difference from Power MOSFET is that it has a

tailing collector current due to the stored charge in the N-drift region.

The switching characteristic provides useful information to determine an appropriate dead

time between turn-on and turn-off of the complementary devices in a half-bridge

configuration.

Table 10. IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

-52

-

ns

Current rise time

-

17

-

ns

Turn-on current slope

-

1850

-

A/µs

Turn-off delay time

-

208

-

ns

Current fall time

-

20

-

ns

Turn-on switching losses

-

456

-

µJ

Turn-off switching losses

-

411

-

µJ

Total switching losses

-

867

-

µJ

Turn-on delay time

-52

-

ns

Current rise time

-

21

-

ns

Turn-on current slope

-

1538

-

A/µs

Turn-off delay time

-

220

-

ns

Current fall time

-

21

-

ns

Turn-on switching losses

-

1330

-

µJ

Turn-off switching losses

-

560

-

µJ

Total switching losses

-

1890

-

µJ