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AN4544 데이터시트(PDF) 20 Page - STMicroelectronics |
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AN4544 데이터시트(HTML) 20 Page - STMicroelectronics |
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20 / 35 page ![]() Datasheet explanation AN4544 20/35 DocID026535 Rev 1 Figure 15. Output characteristics If crossover point is well below IC operation range (like the STGW40V60DF), the IGBT has a positive temperature coefficient. This crossover point is a function of device’s geometry. 2.5.2 Forward on-voltage (VF) Diode forward voltage is specified under the maximum IF (diode continuous forward current @ TC=100 °C) and at case temperatures of 25 °C and 100 °C. Figure 16. Forward on-voltage 2.5.3 Collector cut-off current (ICES) This is the leakage current flowing from collector-to-emitter when the device is off, at a specified collector-to-emitter and gate-emitter voltage. This parameter is a function of VCES and TJ. ICES increases basing on VCES and TJ rise. |
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