ISO5451

SLLSEO1B – JUNE 2015 – REVISED DECEMBER 2015

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7 Specifications

7.1 Absolute Maximum Ratings

(1)

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage input side

GND1 - 0.3

6

V

Positive supply voltage output side

–0.3

35

V

Negative supply voltage output side

–17.5

0.3

V

Total supply output voltage

–0.3

35

V

Gate driver output voltage

V

Gate driver high output current

Gate driver high output current

2.7

A

(max pulse width = 10

μs, max duty

Gate driver low output current

5.5

A

cycle = 0.2%)

Voltage at IN+, IN-, FLT, RDY, RST

GND1 - 0.3

V

Output current of FLT, RDY

10

mA

Voltage at DESAT

GND2 - 0.3

V

Clamp voltage

V

Junction temperature

–40

150

°C

Storage temperature

-65

150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions

is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability

7.2 ESD Ratings

VALUE

UNIT

±4000

Electrostatic discharge

V

Charged-device model (CDM), per JEDEC specification JESD22-

±1500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Supply voltage input side

3

5.5

V

15

30

V

–15

0

V

15

30

V

High-level input voltage (IN+, IN-, RST)

V

Low-level input voltage (IN+, IN-, RST)

0

V

40

ns

Pulse width at RST for resetting fault latch

800

ns

Ambient temperature

-40

25

125

°C

4

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