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ISO5451DW 데이터시트(PDF) 15 Page - Texas Instruments |
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ISO5451DW 데이터시트(HTML) 15 Page - Texas Instruments |
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15 / 38 page ![]() OUT ISO5451 ISO5451 www.ti.com SLLSEO1B – JUNE 2015 – REVISED DECEMBER 2015 9 Detailed Description 9.1 Overview The ISO5451 is an isolated gate driver for IGBTs and MOSFETs. Input CMOS logic and output power stage are separated by a capacitive, silicon dioxide (SiO2), isolation barrier. The IO circuitry on the input side interfaces with a micro controller and consists of gate drive control and RESET (RST) inputs, READY (RDY) and FAULT (FLT) alarm outputs. The power stage consists of power transistors to supply 2.5-A pull-up and 5-A pull-down currents to drive the capacitive load of the external power transistors, as well as DESAT detection circuitry to monitor IGBT collector-emitter overvoltage under short circuit events. The capacitive isolation core consists of transmit circuitry to couple signals across the capacitive isolation barrier, and receive circuitry to convert the resulting low-swing signals into CMOS levels. The ISO5451 also contains under voltage lockout circuitry to prevent insufficient gate drive to the external IGBT, and active output pull-down feature which ensures that the gate-driver output is held low, if the output supply voltage is absent. The ISO5451 also has an active Miller clamp which can be used to prevent parasitic turn-on of the external power transistor, due to Miller effect, for unipolar supply operation. 9.2 Functional Block Diagram Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 15 Product Folder Links: ISO5451 |
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