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ISO5451DW 데이터시트(PDF) 3 Page - Texas Instruments

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부품명 ISO5451DW
상세설명  High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
PDF  38 Pages
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제조업체  TI [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI - Texas Instruments

ISO5451DW 데이터시트(HTML) 3 Page - Texas Instruments

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1
16
2
3
4
5
6
7
8
15
14
13
12
11
10
9
DESAT
VEE2
VCC2
GND2
VEE2
VCC1
GND1
RDY
IN-
IN+
GND1
FLT
RST
NC
OUT
CLAMP
ISO5451
www.ti.com
SLLSEO1B – JUNE 2015 – REVISED DECEMBER 2015
5 Description (continued)
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits
monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low,
otherwise this output is high.
The ISO5451 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from
–40°C to 125°C ambient.
6 Pin Configuration and Function
DW Package
16-Pin SOIC
Top View
Pin Functions
PIN
I/O
DESCRIPTION
NAME
NO.
VEE2
1, 8
-
Output negative supply. Connect to GND2 for Unipolar supply application.
DESAT
2
I
Desaturation voltage input
GND2
3
-
Gate drive common. Connect to IGBT emitter.
NC
4
-
Not connected
VCC2
5
-
Most positive output supply potential.
OUT
6
O
Gate drive voltage output
CLAMP
7
O
Miller clamp output
GND1
9, 16
-
Input ground
IN+
10
I
Non-inverting gate drive voltage control input
IN-
11
I
Inverting gate drive voltage control input
RDY
12
O
Power-good output, active high when both supplies are good.
FLT
13
O
Fault output, low-active during DESAT condition
RST
14
I
Reset input, apply a low pulse to reset fault latch.
VCC1
15
-
Positive input supply (3 V to 5.5 V)
Copyright © 2015, Texas Instruments Incorporated
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3
Product Folder Links: ISO5451



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