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ISO5451DW 데이터시트(PDF) 23 Page - Texas Instruments

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부품명 ISO5451DW
상세설명  High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
PDF  38 Pages
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ISO5451DW 데이터시트(HTML) 23 Page - Texas Instruments

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15
9, 16
11
10
12
13
14
IN-
IN+
RDY
RST
10k
10k
FLT
VCC1
0.1 F
GND1
3V - 5V
10R
ISO5451
C
ISO5451
www.ti.com
SLLSEO1B – JUNE 2015 – REVISED DECEMBER 2015
10.2.2.2 FLT and RDY Pin Circuitry
There is 50k pull-up resistor internally on FLT and RDY pins. The FLT and RDY pin is an open-drain output. A
10-k
Ω pull-up resistor can be used to make it faster rise and to provide logic high when FLT and RDY is inactive,
as shown in Figure 44.
Fast common mode transients can inject noise and glitches on FLT and RDY pins due to parasitic coupling. This
is dependent on board layout. If required, additional capacitance (100 pF to 300 pF) can be included on the FLT
and RDY pins.
Figure 44. FLT and RDY Pin Circuitry for High CMTI
10.2.2.3 Driving the Control Inputs
The amount of common-mode transient immunity (CMTI) can be curtailed by the capacitive coupling from the
high-voltage output circuit to the low-voltage input side of the ISO5451. For maximum CMTI performance, the
digital control inputs, IN+ and IN-, must be actively driven by standard CMOS, push-pull drive circuits. This type
of low-impedance signal source provides active drive signals that prevent unwanted switching of the ISO5451
output under extreme common-mode transient conditions. Passive drive circuits, such as open-drain
configurations using pull-up resistors, must be avoided. There is a 20 ns glitch filter which can filter a glitch up to
20 ns on IN+ or IN-.
Copyright © 2015, Texas Instruments Incorporated
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