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MB9B360R 데이터시트(PDF) 151 Page - Cypress Semiconductor |
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MB9B360R 데이터시트(HTML) 151 Page - Cypress Semiconductor |
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151 / 166 page ![]() Document Number: 002-04872 Rev.*A Page 151 of 166 MB9B360R Series 12.11Standby Recovery Time 12.11.1 Recovery cause: Interrupt/WKUP The time from recovery cause reception of the internal circuit to the program operation start is shown. Recovery count time (VCC = 2.7V to 5.5V, VSS = 0V) Parameter Symbol Value Unit Remarks Typ Max* Sleep mode Ticnt HCLK×1 μs High-speed CR Timer mode Main Timer mode PLL Timer mode 40 80 μs Low-speed CR timer mode 450 900 μs Sub timer mode 881 1136 μs RTC mode stop mode (High-speed CR /Main/PLL run mode return) 270 581 μs RTC mode stop mode (Low-speed CR/sub run mode return) 240 480 Deep standby RTC mode with RAM retention Deep standby stop mode with RAM retention 308 667 μs without RAM retention 308 667 μs with RAM retention *: The maximum value depends on the built-in CR accuracy. Example of standby recovery operation (when in external interrupt recovery*) Ext.INT Ticnt Interrupt factor accept CPU Operation Start Active Interrupt factor clear by CPU *: External interrupt is set to detecting fall edge. |
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