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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TUSB3410 데이터시트(PDF) 87 Page - Texas Instruments |
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TUSB3410 데이터시트(HTML) 87 Page - Texas Instruments |
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87 / 92 page  12–1 12 Electrical Specifications 12.1 Absolute Maximum Ratings† Supply voltage, VCC –0.5 V to 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage, VI –0.5 V to VCC + 0.5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output voltage, VO –0.5 V to VCC + 0.5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input clamp current, IIK ±20 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output clamp current, IOK ±20 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 12.2 Commercial Operating Condition (3.3 V) PARAMETER MIN TYP MAX UNIT VCC Supply voltage 3 3.3 3.6 V VI Input voltage 0 VCC V V High level input voltage TTL 2 VCC V VIH High-level input voltage CMOS 0.7 × VCC VCC V V Low level input voltage TTL 0 0.8 V VIL Low-level input voltage CMOS 0 0.2 × VCC V TA Operating temperature 0 70 °C 12.3 Electrical Characteristics TA = 25°C, VCC = 3.3 V ±5%, VSS = 0 V PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V High level output voltage TTL I 4mA VCC – 0.5 V VOH High-level output voltage CMOS IOH = –4 mA VCC – 0.5 V V Low level output voltage TTL I 4mA 0.5 V VOL Low-level output voltage CMOS IOL = 4 mA 0.5 V V Positive threshold voltage TTL VV 1.8 V VIT+ Positive threshold voltage CMOS VI = VIH 0.7 × VCC V V Negative threshold voltage TTL VV 0.8 1.8 V VIT– Negative threshold voltage CMOS VI = VIH 0.2 × VCC V V Hysteresis (V V ) TTL VV 0.3 0.7 V Vhys Hysteresis (VIT+ – VIT–) CMOS VI = VIH 0.17 × VCC 0.3 × VCC V I High level input current TTL VV ±20 A IIH High-level input current CMOS VI = VIH ±1 µA I Low level input current TTL VV ±20 A IIL Low-level input current CMOS VI = VIL ±1 µA IOZ Output leakage current (Hi-Z) VI = VCC or VSS ±20 µA IOL Output low drive current 0.1 mA IOH Output high drive current 0.1 mA Clock duty cycle‡ 50% Jitter specification‡ ±100 ppm CI Input capacitance 18 pF CO Output capacitance 10 pF ‡ Applies to all clock outputs |
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