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STLUX385ATR 데이터시트(PDF) 23 Page - STMicroelectronics |
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STLUX385ATR 데이터시트(HTML) 23 Page - STMicroelectronics |
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23 / 126 page ![]() DocID027870 Rev 1 23/126 STLUX Product overview 126 5.4.1 Architecture Figure 6. Flash and E2PROM internal memory organizations The memory is organized in blocks of 128 bytes each Read granularity: 1 word = 4 bytes Write/erase granularity: 1 word (4 bytes) or 1 block (128 bytes) in parallel Writing, erasing, word and block management is handled automatically by the memory interface. 5.4.2 Write protection (WP) Write protection in application mode is intended to avoid unintentional overwriting of the memory. The write protection can be removed temporarily by executing a specific sequence in the user software. 5.4.3 Protection of user boot code (UBC) In all STLUX devices a memory area of 32 Kbyte can be protected from overwriting at a user option level. In addition to the standard write protection, the UBC protection can be modified by the embedded program or via a debug interface when the ROP protection is enabled. The UBC memory area contains the reset and interrupt vectors and its size can be adjusted in increments of 512 bytes by programming the UBC and nUBC option bytes. Note: If users choose to update the boot code in the application programming (IAP), this has to be protected so to prevent unwanted modification. |
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