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S2-LP 데이터시트(PDF) 19 Page - STMicroelectronics |
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S2-LP 데이터시트(HTML) 19 Page - STMicroelectronics |
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19 / 90 page ![]() S2-LP Specifications DocID029944 Rev 1 19/90 In order to avoid potential RF performance degradations, the crystal frequency should be chosen to satisfy the following equation: ���������������� − ROUND (���� ������������ ������������ ) ������������ ≥ 1MHz where n is an integer in the set [1- 7, B] (B is the synthesizer’s divider ratio). Table 15: Crystal oscillator characteristics Parameter Test conditions Min. Typ. Max. Unit Crystal frequency 24 26 MHz 48 52 Frequency tolerance(1) ± 40 ppm Minimum requirement on external reference phase noise mask ( ������������ = 26MHz), to avoid degradation on synthesizer phase/noise 10 kHz -135 dBc/Hz 100 kHz -140 1 MHz -140 10 MHz -140 Programmable trans- conductance of the oscillator at start-up 13 -43 mS Startup time(2) VBAT=1.8 V, < ������������ = 26MHz 200 µs Notes: (1)Including initial tolerance, crystal loading, aging, and temperature dependence. The acceptable crystal tolerance depends on RF frequency and channel spacing/bandwidth. (2)Startup times are crystal dependent. The crystal oscillator trans-conductance can be tuned to compensate the variation of crystal oscillator series resistance Table 16: Ultra-low power RC oscillator Parameter Test conditions Typ. Unit Calibrated frequency Calibrated RC oscillator frequency is derived from crystal oscillator frequency. 33.3(1) kHz Frequency accuracy after calibration ±1 % Notes: (1)Depending on the crystal frequency, the reported value is referring to 50MHz. 4.8 RF receiver Characteristics measured over recommended operating conditions unless otherwise specified. All typical values are referred to 25 °C temperature, VBAT = 3.0 V, no frequency offset in the RX signal. All performance is referred to a 50 Ω antenna connector, via the reference design. |
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