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LIS2HH12 데이터시트(PDF) 16 Page - STMicroelectronics

부품명 LIS2HH12
상세설명  Embedded temperature sensor
PDF  47 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

LIS2HH12 데이터시트(HTML) 16 Page - STMicroelectronics

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Factory calibration
LIS2HH12
16/47
DocID025344 Rev 5
When an acceleration is applied to the sensor the proof mass displaces from its nominal
position, causing an imbalance in the capacitive half-bridge. This imbalance is measured
using charge integration in response to a voltage pulse applied to the capacitor.
At steady-state the nominal value of the capacitors are a few pF and when an acceleration
is applied, the maximum variation of the capacitive load is in the fF range.
2.8
IC interface
The complete measurement chain is composed of a low-noise capacitive amplifier which
converts the capacitive unbalancing of the MEMS sensor into an analog voltage using an
analog-to-digital converter.
The acceleration data may be accessed through an I2C/SPI interface thus making the
device particularly suitable for direct interfacing with a microcontroller.
The LIS2HH12 features a data-ready signal which indicates when a new set of measured
acceleration data is available, thus simplifying data synchronization in the digital system that
uses the device.
3
Factory calibration
The IC interface is factory calibrated for sensitivity (So) and Zero-g level (TyOff).
The trim values are stored inside the device in nonvolatile memory. Any time the device is
turned on, the trimming parameters are downloaded into the registers to be used during the
active operation. This allows using the device without further calibration.



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