전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

ISO8200BQ 데이터시트(PDF) 8 Page - STMicroelectronics

부품명 ISO8200BQ
상세설명  Galvanic isolated octal high-side smart power solid state-relay
PDF  37 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ISO8200BQ 데이터시트(HTML) 8 Page - STMicroelectronics

Back Button ISO8200BQ Datasheet HTML 4Page - STMicroelectronics ISO8200BQ Datasheet HTML 5Page - STMicroelectronics ISO8200BQ Datasheet HTML 6Page - STMicroelectronics ISO8200BQ Datasheet HTML 7Page - STMicroelectronics ISO8200BQ Datasheet HTML 8Page - STMicroelectronics ISO8200BQ Datasheet HTML 9Page - STMicroelectronics ISO8200BQ Datasheet HTML 10Page - STMicroelectronics ISO8200BQ Datasheet HTML 11Page - STMicroelectronics ISO8200BQ Datasheet HTML 12Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 8 / 37 page
background image
Absolute maximum ratings
ISO8200BQ
8/37
DocID027303 Rev 4
3
Absolute maximum ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Min.
Max.
Unit
VCC
Power supply voltage
-0.3
45
V
Vdd
Digital supply voltage
-0.3
6.5
V
VIN
DC input pin voltage (INx, OUT_EN, LOAD ,
SYNC )
-0.3
+6.5
V
VFAULT
Fault pin voltage
-0.3
+6.5
V
IGNDdd
DC digital ground reverse current
-25
mA
IOUT
Channel output current (continuous)
Internally limited
A
IGNDcc
DC power ground reverse current
-250
mA
IR
Reverse output current (per channel)
-5
A
IIN
DC input pin current (INx, OUT_EN, LOAD ,
SYNC )
-10
+ 10
mA
IFAULT
Fault pin current
-10
+ 10
mA
VESD
Electrostatic discharge with human body model
(R = 1.5 kΩ; C = 100 pF)
2000
V
EAS
Single pulse avalanche energy per channel not
simultaneously @Tamb= 125 °C, IOUT = 0.5 A
1.8
J
Single pulse avalanche energy per channel, all
channels driven simultaneously @Tamb= 125 °C,
IOUT = 0.5 A
0.35
PTOT
Power dissipation at Tc = 25 °C
Internally limited (1)
W
TJ
Junction operating temperature
Internally limited(1)
°C
TSTG
Storage temperature
-55 to 150
°C
Notes:
(1)Protection functions are intended to avoid IC damage in fault conditions and are not intended for continuous
operation. Continuous or repetitive operations of protection functions may reduce the IC lifetime.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com