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DSM2190F4V 데이터시트(PDF) 53 Page - STMicroelectronics |
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DSM2190F4V 데이터시트(HTML) 53 Page - STMicroelectronics |
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53 / 61 page ![]() 53/61 DSM2190F4 Table 33. Flash Memory Program, Write and Erase Times Note: 1. Programmed to all zero before erase. 2. The polling status, DQ7, is valid tQ7VQV time units before the data byte, DQ0-DQ7, is valid for reading. Table 34. Reset (Reset) Timing Note: 1. Reset (RESET) does not reset Flash memory Program or Erase cycles. 2. Warm reset aborts Flash memory Program or Erase cycles, and puts the device in Read mode. Figure 36. Reset (RESET) Timing Symbol Parameter Min. Typ. Max. Unit Flash Bulk Erase1 (pre-programmed) 330 s Flash Bulk Erase (not pre-programmed) 5 s tWHQV3 Sector Erase (pre-programmed) 1 30 s tWHQV2 Sector Erase (not pre-programmed) 2.2 s tWHQV1 Byte Program 14 1200 µs Program / Erase Cycles (per Sector) 100,000 cycles tWHWLO Sector Erase Time-Out 100 µs tQ7VQV DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)2 30 ns Symbol Parameter Conditions Min Max Unit tNLNH RESET Active Low Time 1 300 ns tNLNH–PO Power On Reset Active Low Time 1 ms tOPR RESET High to Operational Device 300 ns tNLNH-PO tOPR AI02866b RESET tNLNH tNLNH-A tOPR VCC V CC(min) Power-On Reset Warm Reset |
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