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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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NM1282KSLAXAL 데이터시트(PDF) 11 Page - Nanya Technology Corporation. |
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NM1282KSLAXAL 데이터시트(HTML) 11 Page - Nanya Technology Corporation. |
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11 / 120 page  Version 1.3 11 Nanya Technology Corp. 06/2018 All Rights Reserved. © 2Gb SLC NAND + 2Gb LPDDR2 NM1282KSLAXAL NTC Proprietary Level: Property Descriptions The device is a single 1.8V 2Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as X8: (2048 + 128) bytes x 64 pages x 2048blocks. The device has 2176-bytes static registers which allow program and read data to be transferred between the register and memory cell array in 2176-bytes increments. The Erase operation is implemented in a single block unit (X8=128 Kbytes + 8K bytes: 2176 bytes x 64 pages). The device is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. |
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