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STM8S 데이터시트(PDF) 47 Page - STMicroelectronics

부품명 STM8S
상세설명  STM8S Series and STM8AF Series 8-bit microcontrollers
PDF  467 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM8S 데이터시트(HTML) 47 Page - STMicroelectronics

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RM0016
Flash program memory and data EEPROM
56
However, the programming time can be fixed by setting the FIX bit of the FLASH_CR1
register to force the program operation to systematically erase the byte whatever its content
(see Section 4.8.1: Flash control register 1 (FLASH_CR1)). The programming time is
consequently fixed and equal to the sum of the erase and write time (see tPROG in Table
“Flash program memory” in the datasheet).
Note:
To write a byte fast (no erase), the whole word (4 bytes) into which it is written must be
erased beforehand. Consequently, It is not possible to do two fast writes to the same word
(without an erase before the second write): The first write will be fast but the second write to
the other byte will require an erase.
4.6.3
Word programming
A word write operation allows an entire 4-byte word to be programmed in one shot, thus
minimizing the programming time.
As for byte programming, word operation is available both for the main program memory
and data EEPROM. On some devices, the read-while-write (RWW) capability is also
available when a word programming operation is performed on the data EEPROM. Refer to
the datasheets for additional information.
•
In the main program memory:
The application stops for the duration of the byte program operation.
•
In DATA area
–
Devices with RWW capability: Program execution does not stop, and the byte
program operation is performed using the read-while-write (RWW) capability in
IAP mode.
–
Devices without RWW capability: The application stops for the duration of the byte
program operation.
To program a word, the WPRG/NWPRG bits in the FLASH_CR2 and FLASH_NCR2
registers must be previously set/cleared to enable word programming mode (see
Section 4.8.2: Flash control register 2 (FLASH_CR2) and Section 4.8.2: Flash control
register 2 (FLASH_CR2)). Then, the 4 bytes of the word to be programmed must be loaded
starting with the first address. The programming cycle starts automatically when the 4 bytes
have been written.
As for byte operation, the EOP and the WR_PG_DIS control flags of FLASH_IAPSR,
together with the Flash interrupt, can be used to determine if the operation has been
correctly completed.
4.6.4
Block programming
Block program operations are much faster than byte or word program operations. In a block
program operation, a whole block is programmed or erased in a single programming cycle.
Refer to Table 5 for details on the block size according to the devices.



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