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Flash program memory and data EEPROM

device hardware features. The options bytes can be programmed in user, IAP and

ICP/SWIM modes.

•

High density STM8AF devices

–

From 32 to 128 Kbytes of Flash program memory organized in up to 256 pages of

4 blocks of 128 bytes each. The Flash program memory is divided into 2 areas,

the user boot code area (UBC), which size can be configured by option byte, and

the main program memory area. The Flash program memory is mapped in the

upper part of the STM8AF addressing space and includes the reset and interrupt

vectors.

–

Up to 2 Kbytes of data EEPROM (DATA) organized in up to 4 pages of 4 blocks of

128 bytes each. The size of the DATA area is fixed for a given microcontroller. One

block (128 bytes) contains the option bytes of which 15 are used to configure the

device hardware features. The options bytes can be programmed in user, IAP and

ICP/SWIM modes.

The page defines the granularity of the user boot code area as described in Section 4.4.3:

User boot area (UBC).

Figure 6, Figure 7, and Figure 8 show the Flash memory and data EEPROM organization

for STM8S and STM8AF devices. Refer to the STM8S and STM8AF programming manual

(PM0051) for more information.

Note:

The EEPROM access time allows the device to run up to 16 MHz. For clock frequencies

above 16 MHz, Flash/data EEPROM access must be configured for 1 wait state. This is

enabled by the device option byte (refer to the option bytes section of the STM8S and

STM8AF datasheets).

STM8S 데이터시트(PDF) 37 Page - STMicroelectronics