STM8S datasheet(35/467 Pages) STMICROELECTRONICS

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Flash program memory and data EEPROM

4.3

Main Flash memory features

•

STM8S and STM8AF EEPROM is divided into two memory areas

–

Up to 128 Kbytes of Flash program memory. The density differs according to the

device. Refer to Section 4.4: Memory organization for details

–

Up to 2 Kbytes of data EEPROM including option bytes. Data EEPROM density

differs according to the device. Refer to Section 4.4: Memory organization for

details.

•

Programming modes

–

Byte programming and automatic fast byte programming (without erase operation)

–

Word programming

–

Block programming and fast block programming mode (without erase operation)

–

Interrupt generation on end of program/erase operation and on illegal program

operation.

•

Read-while-write capability (RWW). This feature is not available on all devices. Refer to

the datasheets for details

•

In-application programming (IAP) and in-circuit programming (ICP) capabilities

•

Protection features

–

Memory readout protection (ROP)

–

Program memory write protection with memory access security system (MASS

keys)

–

Data memory write protection with memory access security system (MASS keys)

–

Programmable write protected user boot code area (UBC).

•

Memory state configurable to operating or power-down (IDDQ) in Halt and Active-halt

modes

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