STM32F722IC datasheet(120/229 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F722xx STM32F723xx

120/229

DS11853 Rev 6

Table 32. Typical and maximum current consumptions in Standby mode

Symbol

Parameter

Conditions

Typ(1)

Max(2)

Unit

TA = 25 °C

TA =

25 °C

TA =

85 °C

TA =

105 °C

VDD =

1.7 V

VDD=

2.4 V

VDD =

3.3 V

VDD = 3.3 V

IDD_STBY

Supply current

in Standby

mode

Backup SRAM OFF, RTC and

LSE OFF

1.09

1.13

1.4

µA

Backup SRAM ON, RTC and

LSE OFF

1.85

1.88

2.17

Backup SRAM OFF, RTC ON

and LSE in low drive mode

1.65

1.86

2.43

95.5

Backup SRAM OFF, RTC ON

and LSE in medium low drive

mode

1.67

1.88

2.46

47.5

Backup SRAM OFF, RTC ON

and LSE in medium high drive

mode

1.8

2.01

2.61

7.5

50.5

102.5

Backup SRAM OFF, RTC ON

and LSE in high drive mode

1.92

2.13

2.73

107

Backup SRAM ON, RTC ON

and LSE in low drive mode

2.39

2.6

3.23

127

Backup SRAM ON, RTC ON

and LSE in Medium low drive

mode

2.41

2.64

3.25

128

Backup SRAM ON, RTC ON

and LSE in Medium high drive

mode

2.67

2.89

2.53

139

Backup SRAM ON, RTC ON

and LSE in High drive mode

2.68

2.9

3.51

138

1. PDR is OFF for VDD=1.7V. When the PDR is OFF (internal reset OFF), the typical current consumption is reduced by

additional 1.2 µA.

2. Guaranteed by characterization results.

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