STM32F722IC datasheet(121/229 Pages) STMICROELECTRONICS

121 / 229 page

DS11853 Rev 6

121/229

STM32F722xx STM32F723xx

Electrical characteristics

201

Table 33. Typical and maximum current consumptions in VBAT mode

Symbol

Parameter

Conditions(1)

Typ

Max(2)

Unit

TA =25 °C

TA =85 °C TA =105 °C

VBAT =

1.7 V

VBAT=

2.4 V

VBAT=

3.3 V

VBAT = 3.6 V

IDD_VBAT

Supply current

in VBAT mode

Backup SRAM OFF, RTC and

LSE OFF

0.035

0.037

0.043

µA

Backup SRAM ON, RTC and

LSE OFF

0.69

0.71

0.73

Backup SRAM OFF, RTC ON

and LSE in low drive mode

0.57

0.74

1.05

244

Backup SRAM OFF, RTC ON

and LSE in medium low drive

mode

0.59

0.76

1.08

101

251

Backup SRAM OFF, RTC ON

and LSE in medium high drive

mode

0.69

0.86

1.19

111

277

Backup SRAM OFF, RTC ON

and LSE in high drive mode

0.8

0.98

1.31

122

305

Backup SRAM ON, RTC ON and

LSE in low drive mode

1.22

1.41

1.74

162

405

Backup SRAM ON, RTC ON and

LSE in Medium low drive mode

1.25

1.43

1.78

166

414

Backup SRAM ON, RTC ON and

LSE in Medium high drive mode

1.46

1.65

2.01

187

468

Backup SRAM ON, RTC ON and

LSE in High drive mode

1.46

1.65

2.01

187

468

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Guaranteed by characterization results.

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